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inchange semiconductor product specification silicon npn power transistors 3DD200 description ? with to-3 package ? high collector-base breakdown voltage : v cbo =250v applications ? for tv horizontal output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a p c collector power dissipation t c =75 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol characteristics max unit r | jc thermal resistance junction to case 1.5 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 3DD200 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 100 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 250 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 1.5 v v besat base-emitter saturation voltage i c =3a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =250v; i e =0 0.5 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =2a ; v ce =5v 30 120 t f fall time i c =3a; i b1 =0.2a; i b2 =-0.3a 1 | s
inchange semiconductor product specification 3 silicon npn power transistors 3DD200 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

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